SI4435DY International Rectifier, SI4435DY Datasheet

MOSFET P-CH 30V 8A 8-SOIC

SI4435DY

Manufacturer Part Number
SI4435DY
Description
MOSFET P-CH 30V 8A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of SI4435DY

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
2320pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*SI4435DY

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l
l
l
l
Absolute Maximum Ratings
Thermal Resistance
These P-channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Description
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
@ T
@ T
JA
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
®
Parameter
Parameter
Power MOSFETs from
GS
GS
ƒ
@ -10V
@ -10V
G
S
S
S
1
2
3
4
T o p V ie w
HEXFET
8
6
5
7
-55 to + 150
Max.
Max.
0.02
-8.0
-6.4
± 20
50
D
D
D
D
-30
-50
2.5
1.6
A
SO-8
Si4435DY
®
R
Power MOSFET
DS(on)
V
DSS
= 0.020
= -30V
PD- 93768A
Units
Units
W/°C
°C/W
W
°C
V
A
V
1
10/14/99

Related parts for SI4435DY

SI4435DY Summary of contents

Page 1

... Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET Max. @ -10V GS @ -10V GS 0.02 - 150 Max. ƒ PD- 93768A Si4435DY ® Power MOSFET -30V DSS 0.020 D DS(on) SO-8 Units -30 V -8.0 -6.4 A -50 2.5 W 1.6 W/°C ± °C Units 50 °C/W 1 ...

Page 2

... Si4435DY Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 2 1.5 ° 150 C J 1.0 0.5 = -15V 0.0 5.0 6.0 -60 -40 -20 Fig 4. Normalized On-Resistance Si4435DY VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V -2.7V -2.70V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS -8.0A ...

Page 4

... Si4435DY 3500 1MHz iss 3000 rss oss ds gd 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 C J ° 0.1 0.4 0.6 0.8 1.0 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 0.20 0.10 0.00 -0.10 -0.20 -0.30 -0.40 -50 125 150 ° Fig 10. Typical Vgs(th) Variance Vs. 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 Si4435DY Id = -250µA - 100 125 Temperature ( °C ) Juction Temperature Notes: 1. Duty factor ...

Page 6

... Si4435DY 0.10 0.08 0. -8.0A 0.04 0.02 0. GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 6 0.10 0.08 0.06 0.04 0.02 0. Fig 13. Typical On-Resistance Vs. VGS= - 4.5V VGS = -10V Drain Current ( A ) Drain Current www.irf.com ...

Page 7

... C - 0.10 (.004 0.25 (.010 CONTROLLING DIMENSION : INCH MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006 SO-8 Part Marking www.irf.com 45° Si4435DY INCHES MILLIMETERS MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 ...

Page 8

... Si4435DY SO-8 Tape and Reel ( & & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 838 4630 IR TAIWAN:16 Fl ...

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