SI4435DY International Rectifier, SI4435DY Datasheet - Page 6

• Manufacturer Part Number: SI4435DY
• Description: MOSFET P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4435DY

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *SI4435DY

Si4435DY
6
0.10
0.08
0.06
0.04
0.02
0.00
Fig 12. Typical On-Resistance Vs.
2
-V GS, Gate -to -Source Voltage ( V )
4
Gate Voltage
6
8
Id = -8.0A
10
12
14
16
0.10
0.08
0.06
0.04
0.02
0.00
Fig 13. Typical On-Resistance Vs.
0
10
Drain Current
-I D , Drain Current ( A )
VGS= - 4.5V
VGS = -10V
20
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30
40