IRF7204 International Rectifier, IRF7204 Datasheet - Page 2

• Manufacturer Part Number: IRF7204
• Description: MOSFET P-CH 20V 5.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7204

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7204

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
IRF7204
Notes:
V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
R
I
L
L
S
GSS
SM
on
DSS
d(on)
r
d(off)
f
rr
fs
V
(BR)DSS
GS(th)
D
S
oss
iss
rss
SD
DS(ON)
g
gs
gd
rr
Repetitive rating; pulse width limited by
T
I
(BR)DSS
max. junction temperature.
SD
J
150°C
-5.3A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Internal Drain Inductance
Internal Source Inductance
90A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Pulse width
Min. Typ. Max. Units
-1.0
–––
–––
––– -0.022 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-20
–––
–––
Surface mounted on FR-4 board, t
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
––– 0.060
–––
–––
–––
––– -250
––– -100
–––
100
860
750
230
–––
2.5
4.0
–––
–––
7.9
5.0
8.0
25
77
14
26
68
85
0.10
-2.5
–––
-1.2
–––
–––
100
–––
–––
150
100
–––
–––
–––
–––
120
-25
–––
100
-2.5
-15
30
60
300µs; duty cycle
V/°C
nH
µA
nA
ns
nC
pF
ns
nC
A
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
I
R
R
Between lead,6mm(0.25in.)
from package and center
of die contact
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -5.3A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= 10
= 0V, I
= -10V, I
= -4.5V, I
= V
= -15V, I
= -16V, V
= -16V, V
= 12V
= -10V
= 0V
= -12V
= -10V
= -10V
= -10V
2%.
GS
, I
D
F
S
10sec.
D
= -2.4A
= -250µA
D
D
Conditions
= -1.25A, V
D
GS
Conditions
= -250µA
GS
= -5.3A
= -5.3A
= -2.0A
= 0V, T
= 0V
D
= -1mA
G
J
GS
= 125 °C
= 0V
G
S
+L
D
S
D
)
S
D