IRF7204 International Rectifier, IRF7204 Datasheet
IRF7204
Specifications of IRF7204
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IRF7204 Summary of contents
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... T T Junction and Storage Temperature Range J, STG Thermal Resistance Ratings Parameter R Maximum Junction-to-Ambient JA HEXFET 10V GS @ 10V GS - 150 Min. ––– 9.1103B IRF7204 ® Power MOSFET -20V DSS 0.060 D DS(on -5. Max. Units -5.3 A -4.2 -21 2.5 W 0.020 W/°C ± -1.7 V/nS °C Typ ...
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... IRF7204 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Drain-to-Source Voltage ( Fig 1. Typical Output Characteristics -V , Gate-to-Source Voltage ( Fig 3. Typical Transfer Characteristics IRF7204 -V , Drain-to-Source Voltage ( Fig 2. Typical Output Characteristics T , Junction Temperature ( ° Fig 4. Normalized On-Resistance Vs. Temperature ...
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... IRF7204 -V , Drain-to-Source Voltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage -V , Source-to-Drain Voltage ( Fig 7. Typical Source-Drain Diode Forward Voltage Q , Total Gate Charge ( Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 ° ° 150 C J Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 8 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7204 D.U.T. G -10V µ d(on) r d(off Notes: 1 ...
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... IRF7204 Q G -10V Charge Fig 12a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U. -3mA I G Current Sampling Resistors Fig 12b. Gate Charge Test Circuit - ...
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... Logic Level and 3V Drive Devices GS Fig 13. For P-Channel HEXFETS + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P. Period Body Diode Forward Current di/dt Diode Recovery dv/dt Forward Drop 5% IRF7204 + *** V =10V ...
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... IRF7204 Package Outline SO8 Outline 0.25 (.010 0.25 (.010 Part Marking Information SO8 101 ° 101 INCHES DIM MIN MAX A .0532 .0688 A1 .0040 .0098 B .014 .018 C .0075 .0098 D .189 .196 E .150 .157 e .050 BASIC e1 .025 BASIC H .2284 .2440 K .011 .019 C L 0.16 ...
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... IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com (12 . GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7204 . . 8/97 ...