IRF720 Vishay, IRF720 Datasheet
IRF720
Specifications of IRF720
Available stocks
Related parts for IRF720
IRF720 Summary of contents
Page 1
... C SYMBOL ° 100 ° °C C dV/dt T for screw = 25 Ω 3.3 A (see fig. 12 ≤ 150 °C. This datasheet is subject to change without notice. IRF720, SiHF720 Vishay Siliconix RoHS* COMPLIANT device design, low on-resistance LIMIT UNIT V 400 ± 3 2 ...
Page 2
... IRF720, SiHF720 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
Page 3
... C 3.5 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 20 µs Pulse Width T = 150 °C 0 91043_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRF720, SiHF720 Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics ...
Page 4
... IRF720, SiHF720 Vishay Siliconix 1000 MHz iss 800 rss oss ds 600 C iss 400 C oss C 200 rss Drain-to-Source Voltage ( 91043_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 200 Total Gate Charge (nC) 91043_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
Page 5
... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT R Fig. 10a - Switching Time Test Circuit 125 150 Fig. 10b - Switching Time Waveforms - 0 Rectangular Pulse Duration (s) 1 This datasheet is subject to change without notice. IRF720, SiHF720 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...
Page 6
... IRF720, SiHF720 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91043_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...
Page 7
... D • D.U.T. - device under te t P.W. Period D = Period P.W. waveform D Body diode forward current dI/dt waveform D Diode recovery dV/dt Body diode forward drop Ripple ≤ Fig For N-Channel This datasheet is subject to change without notice. IRF720, SiHF720 Vishay Siliconix + www.vishay.com www.vishay.com/doc?91000 7 ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...