IRLML6401TR International Rectifier, IRLML6401TR Datasheet
IRLML6401TR
Specifications of IRLML6401TR
IRLML6401
IRLML6401
IRLML6401CT
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IRLML6401TR Summary of contents
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... Available in Tape and Reel l Fast Switching l l 1.8V Gate Rated These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25° 150°C 10.0 1 -12V ...
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0V MHZ C iss = rss = C gd 1000 C oss = Ciss 800 600 400 Coss Crss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...
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Id = -4.3A 0.04 0.03 0.02 1.0 2.0 3.0 4.0 -V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 0.8 0.7 0.6 0.5 0.4 0.3 -75 Fig ...
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0.10 (.004 NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. ...
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Notes : T his part marking information applies to devices produced before 02/26/2001 EXAMPLE: T HIS IS AN IRLML6302 PART NUMBER PART NUMBER CODE REFERENCE IRLML2402 1B = IRLML2803 1C = IRLML6302 1D = IRLML5103 1E = ...
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TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. IR WORLD ...