IRLML6401TR International Rectifier, IRLML6401TR Datasheet - Page 2

• Manufacturer Part Number: IRLML6401TR
• Description: MOSFET P-CH 12V 4.3A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML6401TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.3A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 5V
• Input Capacitance (ciss) @ Vds: 830pF @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLML6401TR; IRLML6401; IRLML6401; IRLML6401CT

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Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
I
V
t
Q
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
DSS
d(on)
f
S
SM
r
d(off)
rr
GSS
2
fs
SD
(BR)DSS
DS(on)
GS(th)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
(BR)DSS
max. junction temperature.
/∆T
J
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
R
Starting T
G
-0.40 -0.55 -0.95
= 25Ω, I
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
––– -0.007 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-12
8.6
J
–––
––– 0.050
––– 0.085
––– 0.125
–––
–––
–––
––– -100
–––
250
210
830
180
125
–––
–––
–––
8.0
2.6
1.4
22
10
11
32
= 25°C, L = 3.5mH
AS
= -4.3A.
-1.0
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
-1.2
-1.3
-25
2.1
3.9
15
33
12
-34
V/°C
nC
nC
ns
pF
ns
nA
µA
V
V
Ω
V
S
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs ‚
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -4.3A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 89Ω ‚
= -12V, V
= 0V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= V
= -10V, I
= -9.6V, V
= -8.0V
= 8.0V
= -10V
= -5.0V‚
= -10V
= -6.0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -1.3A, V
= -1.3A
D
D
D
GS
= -250µA
GS
= -4.3A
= -2.5A ‚
= -2.0A ‚
= -4.3A ‚
= 0V
= 0V, T
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D
= -1mA
GS
J
G
= 55°C
= 0V ‚
S
D