IRFU3910 International Rectifier, IRFU3910 Datasheet

MOSFET N-CH 100V 16A I-PAK

IRFU3910

Manufacturer Part Number
IRFU3910
Description
MOSFET N-CH 100V 16A I-PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFU3910

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
115 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 25V
Power - Max
79W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU3910

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU3910
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFU3910PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFU3910PBF
0
Company:
Part Number:
IRFU3910PBF
Quantity:
1 000
Company:
Part Number:
IRFU3910PBF M
Quantity:
20 500
Description
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
@ T
@ T
JC
JA
JA
Ultra Low On-Resistance
Surface Mount (IRFR3910)
Straight Lead (IRFU3910)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
T O -252 A A
HEXFET
D -P A K
-55 to + 175
IRFR/U3910
S
D
Max.
0.53
± 20
150
9.0
7.9
5.0
16
12
60
79
T O -25 1A A
®
R
I-P A K
DS(on)
Power MOSFET
V
Max.
110
DSS
1.9
50
PD - 91364B
I
D
= 16A
= 0.115
= 100V
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
5/11/98

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IRFU3910 Summary of contents

Page 1

... Ultra Low On-Resistance Surface Mount (IRFR3910) Straight Lead (IRFU3910) Advanced Process Technology Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ...

Page 2

IRFR/U3910 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VG S TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4. Drain-to-S ource Voltage ( Fig 1. Typical Output Characteristics ...

Page 4

IRFR/U3910 rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 ...

Page 6

IRFR/U3910 0.0 1 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G 5.0 V ...

Page 7

D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS www.irf.com Peak Diode Recovery dv/dt Test Circuit ...

Page 8

IRFR/U3910 Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches (. (. (. (.2 0 ...

Page 9

Package Outline TO-251AA Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 10

IRFR/U3910 Tape & Reel Information TO-252AA ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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