IRFU3910 International Rectifier, IRFU3910 Datasheet - Page 4

• Manufacturer Part Number: IRFU3910
• Description: MOSFET N-CH 100V 16A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFU3910

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 115 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 25V
• Power - Max: 79W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFU3910

IRFR/U3910
4
1 2 0 0
1 0 0 0
1 0 0
8 0 0
6 0 0
4 0 0
2 0 0
1 0
1
0
0.4
Fig 7. Typical Source-Drain Diode
1
T = 1 75 °C
Fig 5. Typical Capacitance Vs.
J
C
C
C
V
0.6
V
iss
o s s
rs s
Drain-to-Source Voltage
S D
D S
Forward Voltage
V
C
C
C
, S ourc e-to-D rain V oltage (V )
, Drain-to-S ourc e Voltage (V)
G S
is s
rss
os s
0.8
= 0V ,
= C
= C
= C
g s
g d
d s
T = 2 5°C
+ C
+ C
J
1.0
1 0
gd
g d
f = 1M H z
, C
1.2
ds
S H O R T E D
V
1.4
G S
= 0 V
1 0 0
1.6
A
A
1 0 0 0
1 0 0
1 0
2 0
1 6
1 2
1
Fig 8. Maximum Safe Operating Area
8
4
0
1
0
T
T
S ing le P u lse
I
Fig 6. Typical Gate Charge Vs.
C
J
D
= 9 .0A
= 25 °C
= 17 5°C
5
O P E R A TIO N IN TH IS A R E A L IM ITE D
Gate-to-Source Voltage
V
D S
Q , T otal G ate C harge (nC )
1 0
G
, D rain-to-S ource V oltage (V )
1 0
1 5
V
V
V
B Y R
D S
D S
D S
2 0
= 80 V
= 50 V
= 20 V
D S (o n)
2 5
FO R TE S T C IR C U IT
S E E F IG U R E 1 3
1 0 0
3 0
1 0 µ s
1 0 m s
1 0 0 µ s
1 m s
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3 5
4 0
1 0 0 0
4 5
A
A