IRF7523D1 International Rectifier, IRF7523D1 Datasheet - Page 5

• Manufacturer Part Number: IRF7523D1
• Description: MOSFET N-CH 30V 2.7A MICRO-8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7523D1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
100
0.1
10
0.00001
400
300
200
100
1
0
D = 0.50
1
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Fig 9. Typical Capacitance Vs.
C
C
C
V
is s
o s s
rs s
Drain-to-Source Voltage
D S
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
V
C
C
C
(THERMAL RESPONSE)
, D rain-to-S ource V oltage (V )
0.0001
G S
iss
rss
oss
SINGLE PULSE
= 0V ,
= C
= C
= C
gs
ds
gd
+ C
+ C
10
gd
gd
f = 1M H z
0.001
, C
Power Mosfet Characteristics
ds
S H O R TE D
t , Rectangular Pulse Duration (sec)
1
0.01
100
A
20
16
12
0.1
8
4
0
0
I
D
Fig 10. Typical Gate Charge Vs.
= 1.7A
1. Duty factor D = t / t
2. Peak T = P
Notes:
2
Gate-to-Source Voltage
Q , Total G ate C harge (nC )
G
1
J
4
DM
x Z
1
V
V
6
D S
D S
thJC
P
2
IRF7523D1
DM
FO R TE S T C IR C U IT
= 24V
= 15V
+ T
S E E FIG U R E 9
10
C
8
t
1
t
2
10
5
100
12
A