IRF7523D1 International Rectifier, IRF7523D1 Datasheet

MOSFET N-CH 30V 2.7A MICRO-8

IRF7523D1

Manufacturer Part Number
IRF7523D1
Description
MOSFET N-CH 30V 2.7A MICRO-8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7523D1

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
130 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
210pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7523D1TRPBF
Manufacturer:
IR
Quantity:
20 000
Description
The FETKY
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8
the smallest footprint available in an SOIC outline. This makes the Micro8
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8
environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (T
Thermal Resistance Ratings
Notes:
www.irf.com
Parameter
R
Parameter
I
I
I
P
P
V
dv/dt
T
D
D
DM
J,
D
D
GS
JA
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
I
Pulse width
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
Co-packaged HEXFET
and Schottky Diode
N-Channel HEXFET
Low V
Generation 5 Technology
Micro8
@ T
@ T
SD
@T
@T
T
STG
A
A
A
A
1.7A, di/dt
= 25°C
= 70°C
= 25°C
= 70°C
F
TM
TM
Schottky Rectifier
Footprint
TM
family of co-packaged HEXFETs and Schottky diodes offer the
300µs; duty cycle
package, with half the footprint area of the standard SO-8, provides
120A/µs, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
TM
Junction-to-Ambient
DD
will allow it to fit easily into extremely thin application
®
V
2%
Power MOSFET
(BR)DSS
A
, T
= 25°C unless otherwise noted)
J
150°C
GS
@10V
G
A
S
A
FETKY MOSFET / Schottky Diode
1
2
3
4
T op V ie w
TM
an ideal
8
6
5
7
-55 to +150
Maximum
IRF7523D1
1.25
± 20
Maximum
K
K
D
D
2.7
2.1
0.8
6.2
21
10
100
Schottky Vf = 0.39V
R
DS(on)
V
DSS
Micro8
= 0.11
= 30V
TM
Units
°C/W
Units
PD- 91647C
W/°C
V/ns
°C
W
A
V
1
3/17/99

Related parts for IRF7523D1

IRF7523D1 Summary of contents

Page 1

... When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance www.irf.com FETKY MOSFET / Schottky Diode Power MOSFET 25°C unless otherwise noted) A @10V 150°C (BR)DSS J PD- 91647C IRF7523D1 30V DSS 0.11 6 DS(on Schottky Vf = 0.39V TM Micro8 TM an ideal Maximum Units 2 ...

Page 2

... IRF7523D1 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

Page 3

... - lta Fig 3. Typical Transfer Characteristics www.irf.com Power Mosfet Characteristics 3.0V 20µ 25° µ 4.5 5.0 5.5 6.0 IRF7523D1 VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 20µ 150°C J 0.1 0 rain-to-S ource V oltage ( Fig 2. Typical Output Characteristics 150 ° 25° ...

Page 4

... IRF7523D1 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction T em perature (° Fig 5. Normalized On-Resistance Vs. Temperature /5 Fig 7. Typical On-Resistance Vs. Gate Voltage 4 Power Mosfet Characteristics V = 10V Fig 6. Typical On-Resistance Vs. Drain 100 ingle P ulse 0.1 1 Fig 8. Maximum Safe Operating Area , Current TIO LIM ITE D ...

Page 5

... Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Power Mosfet Characteristics 100 0 Fig 10. Typical Gate Charge Vs. 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7523D1 = 1. 24V 15V FIG Total G ate C harge ( Gate-to-Source Voltage Notes: 1 ...

Page 6

... IRF7523D1 Schottky Diode Characteristics 0.1 0.0 0.2 0.4 0 lta Forward Voltage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteris- tics ° ° °C J 160 140 120 100 0 Fig.14 - Maximum Allowable Ambient J R Fig Typical Values of Reverse Current Vs. Reverse Voltage V = 80% R ated ...

Page 7

... TM Micro8 Package Details 0 0.08 (.0 03 Part Marking www.irf.com 0.10 (. IRF7523D1 LIM . . . .13 0. .95 3. SIC 0 SIC 0 2 . .66 0° 6° 0° 6° ...

Page 8

... IRF7523D1 TM Micro8 Tape & Reel 8 7 & ILL -481 & -541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K& ...

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