SI4420DY International Rectifier, SI4420DY Datasheet - Page 3

• Manufacturer Part Number: SI4420DY
• Description: MOSFET N-CH 30V 12.5A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4420DY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 12.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 2240pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *SI4420DY

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1000
100
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1000
0.1
100
10
TOP
BOTTOM
4.0
V
T J = -55°C
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V GS , Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
5.0
1
6.0
4.5V
V DS = 25V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
7.0
T J = 25°C
J
T J = 150°C
10
°
8.0
9.0
100
1000
100
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
V
12.5A
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
1
20
40
Si4420DY
4.5V
60
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
10V
3
100