IRFB23N20D International Rectifier, IRFB23N20D Datasheet

MOSFET N-CH 200V 24A TO-220AB

IRFB23N20D

Manufacturer Part Number
IRFB23N20D
Description
MOSFET N-CH 200V 24A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB23N20D

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
1960pF @ 25V
Power - Max
3.8W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFB23N20D

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Notes
Typical SMPS Topologies
www.irf.com
Absolute Maximum Ratings
Applications
Benefits
I
I
I
P
P
V
dv/dt
T
T
D
D
DM
J
STG
D
D
GS
@ T
@ T
Effective C
App. Note AN1001)
and Current
@T
@T
Telecom 48V input Forward Converter
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
through
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Power Dissipation
are on page 11
to Simplify Design, (See
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB23N20D
TO-220AB
V
200V
DSS
300 (1.6mm from case )
HEXFET
-55 to + 175
10 lbf•in (1.1N•m)
IRFS23N20D
R
Max.
170
± 30
3.8
1.1
3.3
DS(on)
24
17
96
D
2
0.10
Pak
®
IRFSL23N20D
Power MOSFET
IRFB23N20D
IRFS23N20D
max
IRFSL23N20D
PD- 93904A
TO-262
Units
W/°C
V/ns
24A
°C
W
I
A
V
D
1
4/26/00

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IRFB23N20D Summary of contents

Page 1

... Notes through are on page 11 www.irf.com SMPS MOSFET HEXFET V DSS 200V TO-220AB IRFB23N20D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) PD- 93904A IRFB23N20D IRFS23N20D IRFSL23N20D ® Power MOSFET R max I DS(on) D 0.10 24A 2 D Pak TO-262 IRFS23N20D IRFSL23N20D Max. Units ...

Page 2

IRFB/IRFS/IRFSL23N20D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 10 5.5V BOTTOM 5.0V 1 5.0V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

IRFB/IRFS/IRFSL23N20D 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) ...

Page 6

IRFB/IRFS/IRFSL23N20D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped ...

Page 7

D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRFB/IRFS/IRFSL23N20D ...

Page 8

IRFB/IRFS/IRFSL23N20D TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 9

D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 ...

Page 10

IRFB/IRFS/IRFSL23N20D TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com ...

Page 11

D Pak Tape & Reel Information TIO ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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