MOSFET N-CH 200V 24A TO-220AB

IRFB23N20D

Manufacturer Part NumberIRFB23N20D
DescriptionMOSFET N-CH 200V 24A TO-220AB
ManufacturerInternational Rectifier
SeriesHEXFET®
IRFB23N20D datasheet
 


Specifications of IRFB23N20D

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs100 mOhm @ 14A, 10VDrain To Source Voltage (vdss)200V
Current - Continuous Drain (id) @ 25° C24AVgs(th) (max) @ Id5.5V @ 250µA
Gate Charge (qg) @ Vgs86nC @ 10VInput Capacitance (ciss) @ Vds1960pF @ 25V
Power - Max3.8WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Other names*IRFB23N20D  
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Applications
High frequency DC-DC converters
Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective C
to Simplify Design, (See
OSS
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Typical SMPS Topologies
Telecom 48V input Forward Converter
Notes
through
are on page 11
www.irf.com
SMPS MOSFET
HEXFET
V
DSS
200V
TO-220AB
IRFB23N20D
@ 10V
GS
@ 10V
GS
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
PD- 93904A
IRFB23N20D
IRFS23N20D
IRFSL23N20D
®
Power MOSFET
R
max
I
DS(on)
D
0.10
24A
2
D
Pak
TO-262
IRFS23N20D
IRFSL23N20D
Max.
Units
24
17
A
96
3.8
W
170
1.1
W/°C
± 30
V
3.3
V/ns
°C
1
4/26/00

IRFB23N20D Summary of contents

  • Page 1

    ... Notes through are on page 11 www.irf.com SMPS MOSFET HEXFET V DSS 200V TO-220AB IRFB23N20D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) PD- 93904A IRFB23N20D IRFS23N20D IRFSL23N20D ® Power MOSFET R max I DS(on) D 0.10 24A 2 D Pak TO-262 IRFS23N20D IRFSL23N20D Max. Units ...

  • Page 2

    IRFB/IRFS/IRFSL23N20D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

  • Page 3

    VGS TOP 15V 12V 10V 8.0V 7.0V 6.0V 10 5.5V BOTTOM 5.0V 1 5.0V 0.1 20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

  • Page 4

    IRFB/IRFS/IRFSL23N20D 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss ...

  • Page 5

    T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) ...

  • Page 6

    IRFB/IRFS/IRFSL23N20D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped ...

  • Page 7

    D.U Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET www.irf.com IRFB/IRFS/IRFSL23N20D ...

  • Page 8

    IRFB/IRFS/IRFSL23N20D TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

  • Page 9

    D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 ...

  • Page 10

    IRFB/IRFS/IRFSL23N20D TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com ...

  • Page 11

    D Pak Tape & Reel Information TIO ...

  • Page 12

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...