IRF1010ESTRR International Rectifier, IRF1010ESTRR Datasheet

IRF1010ESTRR

Manufacturer Part Number

IRF1010ESTRR

Description

MOSFET N-CH 60V 84A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF1010EL.pdf (11 pages)

Specifications of IRF1010ESTRR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

12 mOhm @ 50A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

84A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

3210pF @ 25V

Power - Max

200W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

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Description

Absolute Maximum Ratings

Thermal Resistance

Advanced HEXFET

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF1010EL) is available for low-

profile applications.

www.irf.com

dv/dt

STG

Pak is suitable for high current applications because of its

@ T

Advanced Process Technology

Surface Mount (IRF1010ES)

Low-profile through-hole (IRF1010EL)

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Junction-to-Ambient (PCB mount)**

Power MOSFETs from International

Parameter

@ 10V

Typ.

300 (1.6mm from case )

–––

10 lbf•in (1.1N•m)

HEXFET

-55 to + 175

IRF1010ES

Max.

330

200

± 20

1.4

4.0

Pak

‡

IRF1010ES

IRF1010EL

Power MOSFET

DS(on)

Max.

0.75

DSS

= 84A‡

IRF1010EL

TO-262

PD - 91720

= 60V

= 12m

Units

°C/W

W/°C

V/ns

°C

02/14/02

Related parts for IRF1010ESTRR

IRF1010ESTRR Summary of contents

Page 1

Advanced Process Technology l l Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l l Fast Switching Fully Avalanche Rated l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ...

Page 2

IRF1010ES/IRF1010EL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF1010ESTRR International Rectifier, IRF1010ESTRR Datasheet

IRF1010ESTRR

Specifications of IRF1010ESTRR

Related parts for IRF1010ESTRR

IRF1010ESTRR Summary of contents

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