IRF1010ESTRR International Rectifier, IRF1010ESTRR Datasheet

MOSFET N-CH 60V 84A D2PAK

IRF1010ESTRR

Manufacturer Part Number
IRF1010ESTRR
Description
MOSFET N-CH 60V 84A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF1010ESTRR

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
84A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
3210pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
l
l
l
l
l
l
Description
Absolute Maximum Ratings
Thermal Resistance
Advanced HEXFET
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRF1010EL) is available for low-
profile applications.
www.irf.com
I
I
I
P
V
I
E
dv/dt
T
T
R
R
D
D
DM
AR
2
J
STG
D
GS
AR
Pak is suitable for high current applications because of its
@ T
@ T
JC
JA
Advanced Process Technology
Surface Mount (IRF1010ES)
Low-profile through-hole (IRF1010EL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
@T
2
C
C
C
Pak is a surface mount power package capable of
= 25°C
= 100°C
= 25°C
®
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Power MOSFETs from International
Parameter
Parameter


ƒ
GS
GS

@ 10V
@ 10V
G
Typ.
300 (1.6mm from case )
–––
–––
10 lbf•in (1.1N•m)
HEXFET
-55 to + 175
IRF1010ES
S
D
D
Max.
84
330
200
± 20
1.4
4.0
59
50
17
2
Pak
®
IRF1010ES
IRF1010EL
R
Power MOSFET
DS(on)
Max.
V
0.75
I
40
D
DSS
= 84A‡
IRF1010EL
TO-262
PD - 91720
= 60V
= 12m
Units
Units
°C/W
W/°C
V/ns
mJ
°C
W
A
V
A
02/14/02
1

Related parts for IRF1010ESTRR

IRF1010ESTRR Summary of contents

Page 1

Advanced Process Technology l l Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l l Fast Switching Fully Avalanche Rated l Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low ...

Page 2

IRF1010ES/IRF1010EL Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4. 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...

Page 4

IRF1010ES/IRF1010EL 6000 0V, C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 Crss 1000 0 1 ...

Page 5

L IMITED BY PACKAGE 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05  ...

Page 6

IRF1010ES/IRF1010EL Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q ...

Page 7

D.U.T + ‚ -  Reverse Polarity of D.U.T for P-Channel Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent *** V Fig 14. For N-channel www.irf.com IRF1010ES/IRF1010EL Peak Diode ...

Page 8

IRF1010ES/IRF1010EL 2 D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information www.irf.com IRF1010ES/IRF1010EL 9 ...

Page 10

IRF1010ES/IRF1010EL 2 D Pak Tape & Reel Information TIO ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords