IRF3708 International Rectifier, IRF3708 Datasheet

MOSFET N-CH 30V 62A TO-220AB

IRF3708

Manufacturer Part Number
IRF3708
Description
MOSFET N-CH 30V 62A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF3708

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
62A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 4.5V
Input Capacitance (ciss) @ Vds
2417pF @ 15V
Power - Max
87W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF3708

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF3708
Manufacturer:
IR
Quantity:
10 000
Part Number:
IRF3708
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF3708L
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRF3708L MOS
Quantity:
50 000
Part Number:
IRF3708PBF
Manufacturer:
SHINDENGEN
Quantity:
20 000
Part Number:
IRF3708S
Manufacturer:
IR
Quantity:
12 500
Absolute Maximum Ratings
l
l
Benefits
Thermal Resistance
l
l
l
www.irf.com
Applications
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
Notes  through
Symbol
V
V
I
I
I
P
P
T
R
R
R
R
D
D
DM
J
DS
GS
D
D
@ T
@ T
JC
CS
JA
JA
, T
High Frequency Buck Converters for
High Frequency DC-DC Isolated Converters
with Synchronous Rectification for Telecom
and Industrial Use
Computer Processor Power
@T
@T
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
and Current
For recommended footprint and soldering techniques refer to application note #AN-994
STG
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)*
Linear Derating Factor
Gate-to-Source Voltage
at 4.5V V
are on page 10
Parameter
Parameter
GS

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
TO-220AB
IRF3708
V
30V
DSS
Typ.
0.50
–––
–––
–––
HEXFET
-55 to + 175
R
IRF3708S
Max.
DS(on)
248
0.58
±12
D
30
62
52
87
61
2
12m
Pak
®
Power MOSFET
Max.
1.73
max
–––
62
40
IRF3708S
IRF3708L
PD - 93938B
IRF3708
IRF3708L
TO-262
Units
Units
W/°C
°C/W
62A
°C
W
W
I
V
A
V
D
1
8/22/00

Related parts for IRF3708

IRF3708 Summary of contents

Page 1

... PD - 93938B IRF3708 IRF3708S IRF3708L ® HEXFET Power MOSFET R max I DS(on) D 12m 62A 2 D Pak TO-262 IRF3708S IRF3708L Max. Units 30 V ± 248 0.58 W/°C - 175 °C Max. Units 1.73 ––– ...

Page 2

... IRF3708/3708S/3708L Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... Fig 1. Typical Output Characteristics 1000  ° 100  T = 175 20µs PULSE WIDTH 10 2.0 3.0 4 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics www.irf.com IRF3708/3708S/3708L 1000 VGS TOP 10.0V 5.0V 4.5V 4.0V 3.5V 3.3V 100 3.0V BOTTOM 2. 100 0.1 Fig 2. Typical Output Characteristics 2.5  62A ...

Page 4

... IRF3708/3708S/3708L  3500 1MHz iss rss 2800 oss iss 2100 1400  C oss 700  C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000  ° 175 C 100 J  ° 0.1 0.2 0.8 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 ...

Page 5

... D = 0.50 0.20 0.10 0.05 0.1  0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com IRF3708/3708S/3708L R G Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms ...

Page 6

... IRF3708/3708S/3708L 0.025 0.020 0.015 VGS = 4.5V 0.010 VGS = 10V 0.005 0 50 100 150 Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 14a&b. Gate Charge Test Circuit and Waveform Fig 15a&b. Unclamped Inductive Test circuit ...

Page 7

... TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. (. (. (. (. (. & TO-220AB Part Marking Information www.irf.com IRF3708/3708S/3708L (. (. (. (. (. (. (. (. (. .93 (. . & (. (. 0 0 ...

Page 8

... IRF3708/3708S/3708L 2 D Pak Package Outline Dimensions are shown in millimeters (inches) 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) - AX. 2 1 5.49 (.6 10) 1 4.73 (.5 80 1.40 (.0 55) 3X 1.14 (.0 45) 0 0 .08 (.20 0) 0.25 (. FTER & 4. TRO L LIN ATSINK & SIO Pak Part Marking Information ...

Page 9

... TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IRF3708/3708S/3708L 9 ...

Page 10

... IRF3708/3708S/3708L 2 D Pak Tape & Reel Information Dimensions are shown in millimeters (inches IRE C TIO EIA-418 TRO LLIN G DIM ENSIO N : MILLIM DIM ENS ION MEAS URED @ INC LUD ES FLAN GE DIS TO RTIO TER Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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