IRF9530NSTRR International Rectifier, IRF9530NSTRR Datasheet
IRF9530NSTRR
Specifications of IRF9530NSTRR
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IRF9530NSTRR Summary of contents
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... Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...
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IRF9530NS/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4. . µ ...
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IRF9530NS iss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature ...
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IRF9530NS Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V ...
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Peak Diode Recovery dv/dt Test Circuit + * D.U Reverse Polarity of D.U.T for P-Channel Driver Gate Drive Period P.W. D.U.T. I Waveform SD Reverse Recovery Body Diode Forward Current D.U.T. V ...
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IRF9530NS Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 ...
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Package Outline TO-262 Outline Part Marking Information TO-262 IRF9530NS/L ...
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IRF9530NS/L Tape & Reel Information 2 D Pak IRE CTIO (. (. IRE ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...