MOSFET N-CH 40V 104A D2PAK

IRL1104STRL

Manufacturer Part NumberIRL1104STRL
DescriptionMOSFET N-CH 40V 104A D2PAK
ManufacturerInternational Rectifier
SeriesHEXFET®
IRL1104STRL datasheet
 


Specifications of IRL1104STRL

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs8 mOhm @ 62A, 10VDrain To Source Voltage (vdss)40V
Current - Continuous Drain (id) @ 25° C104AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs68nC @ 4.5VInput Capacitance (ciss) @ Vds3445pF @ 25V
Power - Max2.4WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
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D.U.T
+
-
R
G
Driver Gate Drive
P.W.
D.U.T. I
SD
Reverse
Recovery
Current
D.U.T. V
DS
Re-Applied
Voltage
Inductor Curent
*
V
= 5V for Logic Level Devices
GS
Fig 14. For N-Channel HEXFETS
www.irf.com
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
-
dv/dt controlled by R
G
Driver same type as D.U.T.
I
controlled by Duty Factor "D"
SD
D.U.T. - Device Under Test
P.W.
Period
D =
Period
Waveform
Body Diode Forward
Current
di/dt
Waveform
Diode Recovery
dv/dt
Body Diode
Forward Drop
Ripple
5%
IRL1104S/L
+
+
V
DD
-
V
=10V
*
GS
V
DD
I
SD
7