IRL3705NSTRR International Rectifier, IRL3705NSTRR Datasheet - Page 2

• Manufacturer Part Number: IRL3705NSTRR
• Description: MOSFET N-CH 55V 89A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3705NSTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 89A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 5V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics @ T
IRL3705NS/L
Source-Drain Ratings and Characteristics
Notes:
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
I
V
R
V
g
I
Q
Q
Q
t
t
t
t
L
C
C
C
DSS
I
I
V
t
Q
t
GSS
S
d(on)
d(off)
f
on
r
SM
rr
V
fs
S
(BR)DSS
DS(on)
GS(th)
oss
g
gs
gd
iss
rss
SD
T
For recommended footprint and soldering techniques refer to application note #AN-994.
rr
Repetitive rating; pulse width limited by
I
V
R
(BR)DSS
max. junction temperature. ( See fig. 11 )
SD
J
DD
G
= 25 , I
= 25V, starting T
175°C
46A, di/dt
/ T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 46A. (See Figure 12)
250A/µs, V
J
= 25°C, L = 320µH
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
–––
Min. Typ. Max. Units
––– 0.056 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
Pulse width
Uses IRL3705N data and test conditions
Calculated continuous current based on maximum allowable
55
50
–––
–––
–––
–––
–––
package refer to Design Tip # 93-4
junction temperature; for recommended current-handling of the
Intrinsic turn-on time is negligible (turn-on is dominated by L
3600 –––
–––
–––
––– -100
320
–––
––– 0.010
––– 0.012
––– 0.018
–––
–––
–––
–––
–––
–––
140
7.5
870
–––
–––
–––
290
12
37
78
94
89
100
–––
–––
250
–––
–––
–––
–––
–––
–––
–––
310
140
440
2.0
1.3
25
98
19
49
300µs; duty cycle
V/°C
nA
µA
nC
nH
ns
pF
nC
ns
A
V
V
S
V
Reference to 25°C, I
ƒ = 1.0MHz, See Fig. 5
V
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
MOSFET symbol
T
showing the
p-n junction diode.
T
di/dt = 100A/µs
integral reverse
D
D
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 46A
= 46A
= 25°C, I
= 25°C, I
= 0.59
= 1.8
= V
= 44V, V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 25V, I
= 55V, V
= 16V
= 44V
= 5.0V, See Fig. 6 and 13
= 0V
= 25V
= -16V
= 28V
2%.
GS
, I
D
V
F
S
D
D
D
See Fig. 10
GS
= 250µA
D
D
= 46A
GS
GS
Conditions
= 46A, V
Conditions
= 250µA
= 46A
= 46A
= 46A
= 39A
= 5.0V
= 0V, T
= 0V
D
GS
= 1mA
J
= 150°C
= 0V
G
S
+L
D
D
S
)