IRL3705NSTRR International Rectifier, IRL3705NSTRR Datasheet - Page 5

• Manufacturer Part Number: IRL3705NSTRR
• Description: MOSFET N-CH 55V 89A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL3705NSTRR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 89A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 98nC @ 5V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

100
0.01
0.1
80
60
40
20
0.00001
0
1
25
D = 0.50
Fig 9. Maximum Drain Current Vs.
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
C
LIMITED BY PACKAGE
Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
t , Rectangular Pulse Duration (sec)
°
1
150
0.001
175
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.01
V
90%
10%
V
DS
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
R
d(on)
Pulse Width
Duty Factor
G
5.0V
V
J
GS
IRL3705NS/L
t
r
V
DM
DS
x Z
µs
1
0.1
thJC
P
2
DM
+ T
D.U.T.
C
t
1
t
d(off)
R
D
t
2
t
f
1
V
+
-
DD