IRF5803 International Rectifier, IRF5803 Datasheet - Page 3

• Manufacturer Part Number: IRF5803
• Description: MOSFET P-CH 40V 3.4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5803

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.01
100
0.1
100
10
0.1
Fig 3. Typical Transfer Characteristics
10
1
Fig 1. Typical Output Characteristics
1
0.1
2.0
-V
3.0
-V DS , Drain-to-Source Voltage (V)
GS
, Gate-to-Source Voltage (V)
4.0
1
-2.7V

5.0
T = 25 C
J

20µs PULSE WIDTH
Tj = 25°C
V
20µs PULSE WIDTH
DS
°
6.0
10
= -25V

T = 150 C
J
TOP
BOTTOM - 2.7V
7.0
°
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-15V
VGS
100
8.0
0.01
100
0.1
2.0
1.5
1.0
0.5
0.0
Fig 2. Typical Output Characteristics
10
1
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1

I =
D
-3.4A
T , Junction Temperature ( C)
-V DS , Drain-to-Source Voltage (V)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
-2.7V
IRF5803
20µs PULSE WIDTH
Tj = 125°C
10

V
TOP
BOTTOM - 2.7V
GS
°
=
-10V
-
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-15V
VGS
3
100