IRF5803 International Rectifier, IRF5803 Datasheet - Page 4

• Manufacturer Part Number: IRF5803
• Description: MOSFET P-CH 40V 3.4A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5803

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 112 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF5803
4
2000
1500
1000
500
100
0.1
10
0
1
0.4
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
Coss
Ciss
Crss
Drain-to-Source Voltage
-V
-
SD
V DS , Drain-to-Source Voltage (V)

T = 150 C
Forward Voltage
J
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss
SHORTED
C rss
C oss = C ds + C gd
0.8
°
= C gd
10
= C gs + C gd ,

T = 25 C
J
f = 100 KHZ
1.2
°

V
GS
= 0 V
C ds
1.6
100
100
0.1
10
1
12
10
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0

T A = 25°C
T J = 150°C
Single Pulse
I =
Fig 6. Typical Gate Charge Vs.
D
-3.4A
-V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
5
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10

V
V
10
15
DS
DS
=-32V
=-20V
20
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25
100µsec
10msec
1msec
100
30