IRF7465 International Rectifier, IRF7465 Datasheet - Page 5

• Manufacturer Part Number: IRF7465
• Description: MOSFET N-CH 150V 1.9A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7465

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 1.14A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7465

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2.0
1.5
1.0
0.5
0.0
100
0.1
10
0.00001
1
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
Ambient Temperature
C

(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
( C)
125
t , Rectangular Pulse Duration (sec)
°
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS

t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
Notes:
G
0.1
10V
V
GS
t
r
J
V
DS
DM
µs
x Z
1

thJA
P
2
DM
1
D.U.T.
+ T
t
IRF7465
d(off)
A
t
R
1
D
t
2
t
f
+
-
10
V
DD
5