IRF7465 International Rectifier, IRF7465 Datasheet

MOSFET N-CH 150V 1.9A 8-SOIC

IRF7465

Manufacturer Part Number
IRF7465
Description
MOSFET N-CH 150V 1.9A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7465

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 1.14A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
330pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7465

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7465
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7465TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7465TRPBF
0
Company:
Part Number:
IRF7465TRPBF
Quantity:
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Thermal Resistance
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Applications
Notes  through † are on page 8
Benefits
I
I
I
P
V
dv/dt
T
T
Symbol
R
R
D
D
DM
J
STG
D
GS
@ T
@ T
JL
JA
Effective C
App. Note AN1001)
and Current
@T
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design (See
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
150V
1
2
3
4
DSS
T o p V ie w
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
0.28 @V
8
7
6
5
-55 to + 150
R
Max.
0.02
DS(on)
± 30
1.9
1.5
2.5
7.8
D
D
D
15
D
A
A
®
GS
Power MOSFET
max
Max.
= 10V
20
50
IRF7465
SO-8
PD-93896
1.9A
Units
Units
W/°C
°C/W
I
V/ns
D
°C
W
A
V
1
2/8/01

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IRF7465 Summary of contents

Page 1

... Junction-to-Ambient JA Notes  through † are on page 8 www.irf.com SMPS MOSFET V DSS 150V 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– „ ––– PD-93896 IRF7465 ® HEXFET Power MOSFET R max I DS(on 10V 1. SO-8 Max. Units 1.9 1.5 ...

Page 2

... IRF7465 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP 10 BOTTOM 6.0V 1 0.1 0.1 10 100 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 = 25V 0.0 9.0 10.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7465 VGS 15V 12V 10V 8.0V 7.5V 7.0V 6.5V 6.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) 1. 10V ...

Page 4

... IRF7465 10000 0V MHZ C iss = rss = oss = 1000 Ciss Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10  ° 150 0.1 0.4 0.6 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com R G 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7465 D.U. µ d(off ...

Page 6

... IRF7465 0.40 0.36 0. 10V 0.28 0.24 0. Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 20V Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 0 ...

Page 7

... SO-8 Package Details (. (. ( (. SO-8 Part Marking www.irf.com ° (. IRF7465 ILLIM .05 32 .06 88 1 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3. .635 .22 84 .244 0 5.8 0 6.20 K .01 1 ...

Page 8

... IRF7465 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM E NSIO ION ILL (INC & ING SIO ILLIME TER . TLIN IA-48 1 & -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 22mH 1.9A WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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