IRF7451 International Rectifier, IRF7451 Datasheet - Page 3

• Manufacturer Part Number: IRF7451
• Description: MOSFET N-CH 150V 3.6A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7451

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 990pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7451

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0.01
100
0.001
0.1
10
0.01
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
0.1
1
10
4.0
1
0.1
V
T = 150 C
J
GS
V DS , Drain-to-Source Voltage (V)
5.0
, Gate-to-Source Voltage (V)
°
1
6.0
5.0V
20µs PULSE WIDTH
Tj = 25°C
T = 25 C
J
V
20µs PULSE WIDTH
DS
= 25V
°
10
7.0
TOP
BOTTOM 5.0V
VGS
15.0V
12.0V
10.0V
8.0V
7.0V
6.0V
5.5V
8.0
100
Fig 2. Typical Output Characteristics
100
2.5
2.0
1.5
1.0
0.5
0.0
0.1
10
1
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1
I =
D
3.6A
T , Junction Temperature ( C)
V DS , Drain-to-Source Voltage (V)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
20µs PULSE WIDTH
Tj = 150°C
5.0V
IRF7451
10
TOP
BOTTOM 5.0V
V
GS
°
=
10V
15.0V
VGS
12.0V
10.0V
8.0V
7.0V
6.0V
5.5V
3
100