IRF7451 International Rectifier, IRF7451 Datasheet

MOSFET N-CH 150V 3.6A 8-SOIC

IRF7451

Manufacturer Part Number
IRF7451
Description
MOSFET N-CH 150V 3.6A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7451

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
990pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7451

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7451PBF
Manufacturer:
IR
Quantity:
5 206
Part Number:
IRF7451PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7451TR
Manufacturer:
STM
Quantity:
2 676
Part Number:
IRF7451TRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7451TRPBF
0
Company:
Part Number:
IRF7451TRPBF
Quantity:
10 420
Thermal Resistance
Absolute Maximum Ratings
www.irf.com
Applications
I
I
I
P
V
dv/dt
T
T
Notes
Benefits
Symbol
R
R
D
D
DM
J
STG
D
GS
@ T
@ T
JL
JA
Effective C
App. Note AN1001)
and Current
@T
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
High frequency DC-DC converters
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
through
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design, (See
are on page 8
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
150V
DSS
1
2
3
4
T o p V ie w
300 (1.6mm from case )
Typ.
–––
–––
HEXFET
-55 to + 150
8
7
6
5
R
Max.
0.02
± 30
3.6
2.9
2.5
7.9
DS(on)
29
D
D
D
D
A
A
0.09
®
Power MOSFET
Max.
max
20
50
IRF7451
SO-8
PD- 93898A
Units
Units
W/°C
3.6A
°C/W
V/ns
W
°C
I
A
V
D
1
01/31/01

Related parts for IRF7451

IRF7451 Summary of contents

Page 1

... R Junction-to-Ambient JA Notes through are on page 8 www.irf.com SMPS MOSFET HEXFET V DSS 150V 10V GS @ 10V GS - 150 300 (1.6mm from case ) Typ. ––– ––– PD- 93898A IRF7451 ® Power MOSFET R max I DS(on) D 0.09 3. SO-8 Max. Units 3.6 2 2.5 W 0.02 W/°C ± ...

Page 2

... IRF7451 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... Fig 2. Typical Output Characteristics 2 2.0 1.5 ° 1.0 0.5 = 25V 0.0 -60 -40 -20 7.0 8.0 Fig 4. Normalized On-Resistance IRF7451 VGS TOP 15.0V 12.0V 10.0V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V 5.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) 3.6A V ...

Page 4

... IRF7451 100000 0V MHZ C iss = SHORTED C rss = C gd 10000 C oss = 1000 Ciss Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 ° 150 0.1 0.2 0.4 0.6 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 100 1000 0 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... RESPONSE) 0.1 0.0001 0.001 Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 Fig 10b. Switching Time Waveforms 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7451 D.U. 10V Pulse Width µs Duty Factor d(on) ...

Page 6

... IRF7451 0.085 0.083 VGS = 10V 0.080 0.078 0.075 0.073 0.070 Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform Fig 14a&b. Unclamped Inductive Test circuit ...

Page 7

... SO-8 Package Details (. (. ( (. SO-8 Part Marking www.irf.com ° (. IRF7451 ILLIM .05 32 .06 88 1 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3. .635 .22 84 .244 0 5.8 0 6.20 K .01 1 ...

Page 8

... IRF7451 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM ION : ION (IN CHES ). & ING D IME N SIO N : MIL LIM LIN EIA-481 & E IA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T = 25° 33mH 3.6A 2.2A, di/dt 180A/µs, V ...

Related keywords