IRF7707TR International Rectifier, IRF7707TR Datasheet - Page 2

• Manufacturer Part Number: IRF7707TR
• Description: MOSFET P-CH 20V 7A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7707TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2361pF @ 15V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant


IRF7707
Source-Drain Ratings and Characteristics
Notes:
‚
Electrical Characteristics @ T
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
R
I
rr
d(on)
r
d(off)
f
I
DSS
V
2
fs
SD
GSS
(BR)DSS
GS(th)
rr
g
gs
gd
iss
oss
rss
Repetitive rating; pulse width limited by
DS(on)
Pulse width
(BR)DSS
max. junction temperature.
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
Parameter
Parameter
2%.
J
= 25°C (unless otherwise specified)
-0.45 –––
Min. Typ. Max. Units
–––
Min. Typ. Max. Units
–––
–––
–––
–––
––– 0.012 –––
––– 14.3
––– 18.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2361 –––
–––
–––
-20
15
ƒ
When mounted on 1 inch square copper board, t
–––
–––
–––
142
147
–––
–––
–––
–––
––– -100
–––
134
138
512
323
6.4
31
10
11
54
-1.2
221
213
-1.2
-1.0
–––
–––
100
–––
–––
201
207
–––
–––
-28
-25
-1.5
22
33
47
17
81
V/°C
m
nC
µA
nA
ns
nC
pF
ns
V
V
V
S
A
p-n junction diode.
di/dt = -100A/µs
MOSFET symbol
showing the
integral reverse
T
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -7.0A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= V
= -10V, I
= -16V, V
= -16V, V
= -16V
= -15V
= 0V, I
= -4.5V, I
= -2.5V, I
= -12V
= 12V
= -4.5V
= -10V
= -4.5V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
‚
= -250µA
D
= -1.5A, V
= -1.5A
D
D
GS
GS
= -250µA
= -7.0A
= -7.0A
= -6.0A
‚
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
‚
‚
J
G
= 70°C
= 0V
10sec.
‚
S
D