IRLR3715Z International Rectifier, IRLR3715Z Datasheet - Page 4

• Manufacturer Part Number: IRLR3715Z
• Description: MOSFET N-CH 20V 49A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3715Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 49A
• Vgs(th) (max) @ Id: 2.55V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 810pF @ 10V
• Power - Max: 40W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR3715Z

1000.00
4
10000
100.00
1000
10.00
100
1.00
0.10
10
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Drain-to-Source Voltage
C rss
C oss
T J = 175°C
C iss
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
V SD , Source-to-Drain Voltage (V)
Forward Voltage
T J = 25°C
10
f = 1 MHZ
V GS = 0V
100
1000
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
Fig 8. Maximum Safe Operating Area
1
0
1
Fig 6. Typical Gate Charge vs.
I D = 12A
Tc = 25°C
Tj = 175°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
2
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 16V
V DS = 10V
4
10
6
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10msec
1msec
100µsec
8
100
10