IRFL024Z International Rectifier, IRFL024Z Datasheet

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... Thermal Resistance R Junction-to-Ambient (PCB mount, steady state) θJA R Junction-to-Ambient (PCB mount, steady state) θJA www.irf.com AUTOMOTIVE MOSFET G Parameter @ 10V (Silicon Limited 10V GS ™ Parameter 95817 IRFL024Z ® HEXFET Power MOSFET 55V DSS R = 57.5mΩ DS(on 5. SOT-223 Max. Units 5.1 4 2.8 1 ...

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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 4.5V 30µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 150°C 10 ...

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0V MHZ C iss = SHORTED C rss = oss = 1000 C iss C oss 100 ...

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T A ,Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL ...

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D.U 20V V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

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Duty Cycle = Single Pulse 1 0.01 0.05 0.10 0.1 0.01 1.0E-05 1.0E-04 Fig 15. Typical Avalanche Current vs.Pulsewidth 14 TOP Single Pulse BOTTOM 1% Duty Cycle 3. ...

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D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

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TR FEED DIRECTION 12.10 (.475) 11.90 (.469) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 330.00 (13.000) MAX. NOTES ...