IRFL024Z International Rectifier, IRFL024Z Datasheet - Page 3

• Manufacturer Part Number: IRFL024Z
• Description: MOSFET N-CH 55V 5.1A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL024Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 57.5 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFL024Z

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100
100
1.0
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
4
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
5
T J = 25°C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
6
4.5V
7
V DS = 25V
30µs PULSE WIDTH
30µs PULSE WIDTH
Tj = 25°C
T J = 150°C
10
8
9
100
10
100
0.1
Fig 4. Typical Forward Transconductance
10
Fig 2. Typical Output Characteristics
12
10
1
8
6
4
2
0
0.1
0
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
2
I D ,Drain-to-Source Current (A)
vs. Drain Current
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
4
6
30µs PULSE WIDTH
Tj = 150°C
4.5V
T J = 25°C
T J = 150°C
10
8
V DS = 10V
10
3
100
12