IRF1010ZS International Rectifier, IRF1010ZS Datasheet - Page 4

• Manufacturer Part Number: IRF1010ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010ZS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1010ZS

4
1000.0
100.0
5000
4000
3000
2000
1000
10.0
1.0
0.1
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T J = 175°C
V SD , Source-toDrain Voltage (V)
V DS , Drain-to-Source Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.6
T J = 25°C
Crss
Coss
Ciss
1.0
f = 1 MHZ
10
1.4
V GS = 0V
1.8
100
10000
1000
100
0.1
Fig 8. Maximum Safe Operating Area
20
16
12
10
8
4
0
1
Fig 6. Typical Gate Charge Vs.
0
1
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 75A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q G Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V DS = 44V
VDS= 28V
40
60
100µsec
10msec
1msec
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100
80
1000
100