IRF1010ZS International Rectifier, IRF1010ZS Datasheet - Page 6

• Manufacturer Part Number: IRF1010ZS
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010ZS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1010ZS

250
15V
200
DRIVER
L
V DS
150
D.U.T
R G
+
V DD
-
I AS
A
V
20V
GS
0.01 Ω
t p
100
Fig 12a. Unclamped Inductive Test Circuit
50
V
(BR)DSS
t p
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
Q
Q
GS
GD
4.0
V
G
I D = 250µA
3.0
Charge
Fig 13a. Basic Gate Charge Waveform
2.0
L
VCC
DUT
0
1.0
1K
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
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