IRF1010Z International Rectifier, IRF1010Z Datasheet - Page 5

• Manufacturer Part Number: IRF1010Z
• Description: MOSFET N-CH 55V 75A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 2840pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF1010Z

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0.001
100
0.01
80
60
40
20
0.1
10
Fig 9. Maximum Drain Current Vs.
0
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
Case Temperature
0.02
0.05
0.10
0.01
0.20
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
LIMITED BY PACKAGE
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
2.5
2.0
1.5
1.0
0.5
Fig 10. Normalized On-Resistance
-60 -40 -20 0
0.001
I D = 75A
V GS = 10V
T J , Junction Temperature (°C)
Vs. Temperature
20 40 60 80 100 120 140 160 180
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
5
0.1