IRFB4410 International Rectifier, IRFB4410 Datasheet - Page 2

• Manufacturer Part Number: IRFB4410
• Description: MOSFET N-CH 100V 96A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4410

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 96A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 50V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB4410

Notes:

‚
ƒ
„
…
V
∆V
R
V
I
I
R
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Static @ T
Dynamic @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
rr
temperature. Package limitation current is 75A.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
Symbol
Symbol
Symbol
R
above this value.
(BR)DSS
SD
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)
≤ 58A, di/dt ≤ 650A/µs, V
= 25Ω, I
/∆T
J
AS
Jmax
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 25°C (unless otherwise specified)
= 58A, V
, starting T
J
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.14mH
DD
Ãd
≤ V
Parameter
Parameter
(BR)DSS
, T
J
≤ 175°C.
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
––– 0.094 –––
–––
–––
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
†
‡
ˆ
‰
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
C
as C
C
footprint and soldering techniques refer to application note #AN-994.
oss
oss
θ
oss
5150
–––
–––
–––
–––
–––
–––
–––
120
360
190
420
500
–––
–––
–––
110
eff. (TR) is a fixed capacitance that gives the same charging time
oss
8.0
1.5
2.8
eff. (ER) is a fixed capacitance that gives the same energy as
while V
31
44
24
80
55
50
38
51
61
while V
-200
96
DS
–––
250
200
–––
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
380
170
–––
4.0
1.3
10
20
56
77
92
™
DS
is rising from 0 to 80% V
is rising from 0 to 80% V
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
f = 1MHz, open drain
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 58A
= 58A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 4.1Ω
= V
= 100V, V
= 100V, V
= 50V, I
= 80V
= 50V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 65V
= 10V
= 0V
= 0V, V
= 0V, V
GS
, I
D
g
g
DSS
D
DS
DS
S
D
D
= 250µA
= 58A, V
= 150µA
= 58A
= 58A
DSS
GS
GS
.
= 0V to 80V
= 0V to 80V
Conditions
Conditions
Conditions
= 0V
= 0V, T
.
V
I
di/dt = 100A/µs
F
R
= 58A
D
g
= 85V,
GS
= 1mA
J
= 0V
= 125°C
i
G
d
www.irf.com
, See Fig.11
, See Fig. 5
g
g
S
D