IRFB4410 International Rectifier, IRFB4410 Datasheet - Page 4

• Manufacturer Part Number: IRFB4410
• Description: MOSFET N-CH 100V 96A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4410

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 58A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 96A
• Vgs(th) (max) @ Id: 4V @ 150µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 5150pF @ 50V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFB4410

4
Fig 9. Maximum Drain Current vs. Case Temperature
100
Fig 7. Typical Source-Drain Diode Forward Voltage
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
0
1000
25
0
100
10
1
Fig 11. Typical C
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V DS, Drain-to-Source Voltage (V)
20
50
T C , Case Temperature (°C)
T J = 175°C
V SD , Source-to-Drain Voltage (V)
40
75
Limited By Package
100
60
OSS
T J = 25°C
125
80
Stored Energy
150
100
V GS = 0V
120
175
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
100
130
125
120
115
110
105
100
900
800
700
600
500
400
300
200
100
10
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0
25
0
Tc = 25°C
Tj = 175°C
Single Pulse
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
10msec
1
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
DC
20 40 60 80 100 120 140 160 180
75
1msec
10
100
100µsec
TOP
BOTTOM 58A
125
100
150
I D
6.7A
9.7A
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1000
175