IRFS4710PBF International Rectifier, IRFS4710PBF Datasheet

MOSFET N-CH 100V 75A D2PAK

IRFS4710PBF

Manufacturer Part Number
IRFS4710PBF
Description
MOSFET N-CH 100V 75A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFS4710PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
6160pF @ 25V
Power - Max
3.8W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFS4710PBF
Notes  through ‡ are on page 11
l
l
l
l
l
l
l
Thermal Resistance
www.irf.com
Applications
Absolute Maximum Ratings
Benefits
I
I
I
P
P
V
dv/dt
T
T
R
R
R
R
D
D
DM
J
STG
D
D
GS
θJC
θCS
θJA
θJA
@ T
@ T
and Current
Effective C
App. Note AN1001)
High frequency DC-DC converters
Motor Control
Uninterrutible Power Supplies
Lead-Free
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
@T
Switching Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
to Simplify Design, (See
Parameter
Parameter
GS
GS
@ 10V
@ 10V
TO-220AB
IRFB4710
V
100V
DSS
Typ.
300 (1.6mm from case )
0.50
–––
–––
–––
HEXFET
-55 to + 175
10 lbf•in (1.1N•m)
R
Max.
IRFS4710
300
200
± 20
3.8
1.4
8.2
DS(on)
75
53
D
2
0.014Ω
Pak
IRFSL4710PbF
®
IRFB4710PbF
IRFS4710PbF
Power MOSFET
Max.
0.74
max
–––
62
40
IRFSL4710
TO-262
PD- 95146
Units
Units
W/°C
°C/W
V/ns
75A
°C
W
I
A
V
D
1
04/22/04

Related parts for IRFS4710PBF

IRFS4710PBF Summary of contents

Page 1

... IRFS4710 Max. @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– ––– PD- 95146 IRFB4710PbF IRFS4710PbF IRFSL4710PbF ® Power MOSFET max I DS(on) D 0.014Ω 75A 2 D Pak TO-262 IRFSL4710 Units ...

Page 2

IRFB/IRFS/IRFL4710PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.5V 100 7.0V 6.5V BOTTOM 6. 6.0V 0.1  20µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output ...

Page 4

IRFB/IRFS/IRFL4710PbF Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100  ° 175 0.1 0.0 0.4 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05  SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 ...

Page 6

IRFB/IRFS/IRFL4710PbF Ω Fig 12a. Unclamped Inductive Test Circuit ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET ...

Page 8

IRFB/IRFS/IRFL4710PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 9

D Pak Package Outline Dimensions are shown in millimeters (inches Pak Part Marking Information (Lead-Free WIT COD ...

Page 10

IRFB/IRFS/IRFL4710PbF TO-262 Package Outline TO-262 Part Marking Information E XAMPL 3103L L OT CODE 1789 19, 1997 ...

Page 11

D Pak Tape & Reel Information Dimensions are shown in millimeters (inches (. (. ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords