IXFH26N55Q IXYS, IXFH26N55Q Datasheet
IXFH26N55Q
Manufacturer Part Number
IXFH26N55Q
Description
MOSFET N-CH 550V 26A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH26N55Q.pdf
(2 pages)
Specifications of IXFH26N55Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
92nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
375W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Drain-source Breakdown Voltage
550 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
26 A
Power Dissipation
375 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
550
Id(cont), Tc=25°c, (a)
26
Rds(on), Max, Tj=25°c, (?)
0.23
Ciss, Typ, (pf)
3300
Qg, Typ, (nc)
92
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
400
Rthjc, Max, (ºc/w)
0.31
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
Pulse test, t
S
C
C
C
C
J
C
GS
GS
GS
GS
J
J
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 30 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
, di/dt 100 A/ s, V
GS
DSS
, I
D
D
DC
D
= 250 A
= 4 mA
, V
= 0.5 I
300 s, duty cycle d
G
= 2
DS
g
= 0
, High dv/dt
D25
GS
= 1 M
DD
(T
T
T
J
J
J
Advanced Technical Information
V
= 25 C, unless otherwise specified)
DSS
= 25 C
= 125 C
,
JM
2 %
IXFH 26N55Q
IXFT 26N55Q
550
min.
2.5
-55 to +150
-55 to +150
Characteristic Values
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
104
375
550
550
300
150
2.0
26
26
30
40
50
20
6
4
0.23
100
max.
4.5
25
1
V/ns
mJ
mA
W
nA
C
C
C
C
V
V
V
V
A
A
A
g
g
V
V
J
A
S = Source TAB = Drain
Features
Advantages
V
I
R
t
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G = Gate
D25
rr
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
250 ns
DS (on)
D
= 550 V
= 26 A
= 0.23
G
= Drain
S
g
DS99001(01/03)
process
(TAB)
(TAB)
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IXFH26N55Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved Advanced Technical Information IXFH 26N55Q IXFT 26N55Q Maximum Ratings 550 = 1 M 550 104 2 DSS 375 -55 to +150 150 -55 to +150 300 1.13/10 Nm/lb.in Characteristic Values ...
Page 2
... -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 16 22 3000 420 120 ...