IRF7413QTRPBF International Rectifier, IRF7413QTRPBF Datasheet

Page 1

Advanced Process Technology l Ultra Low On-Resistance l N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l Description ® These HEXFET Power MOSFET's in SO-8 package utilize the lastest processing ...

Page 2

Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source ...

Page 3

PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS 100 T = 150° 25° 20µs PULSE WIDTH 1 3.0 3 Gate-to-Source ...

Page 4

1MHz iss gs gd 2800 rss iss oss ds gd 2400 C oss 2000 1600 1200 C rss ...

Page 5

Charge Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ 3mA I G Current Sampling Resistors 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE ...

Page 6

D.U 20V 0.01 Ω www.irf.com 600 15V 500 400 DRIVER 300 + - 200 100 V (BR)DSS 0 25 TOP BOTTOM 50 75 100 ...

Page 7

D.U.T + ‚ -  Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • • Period D = P.W. Waveform SD Body Diode Forward ...

Page 8

SO-8 Package Details Dimensions are shown in milimeters (inches 0.25 [.010 NOT DIMENS IONING & ...

Page 9

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...