2SK1381 Toshiba, 2SK1381 Datasheet
2SK1381
Manufacturer Part Number
2SK1381
Description
MOSFET N-CH 100V 50A 2-16C1B
Manufacturer
Toshiba
Datasheet
1.2SK1381F.pdf
(6 pages)
Specifications of 2SK1381
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
32 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
88nC @ 10V
Input Capacitance (ciss) @ Vds
3700pF @ 10V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK1381
Manufacturer:
TOS
Quantity:
5 000
Company:
Part Number:
2SK1381
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
Part Number:
2SK1381
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Relay Drive, Motor Drive and DC−DC Converter
Applications
Maximum Ratings
Thermal Characteristics
4-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
GS
DC
Pulse (Note 1)
= 20 kΩ)
(Ta = 25°C)
(Note 1)
: I
: V
DSS
th
= 0.8~2.0 V (V
= 100 μA (max) (V
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
T
I
T
DGR
P
GSS
DSS
I
DP
stg
D
ch
D
DS (ON)
2SK1381
fs
| = 33 S (typ.)
DS
= 25 mΩ (typ.)
= 10 V, I
−55~150
Rating
DS
0.833
Max
100
100
±20
200
150
150
50
50
1
= 100 V)
D
= 1 mA)
°C / W
°C / W
Unit
Unit
°C
°C
W
V
V
V
A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
2
−π−MOSIII)
2-16C1B
2004-07-06
―
―
2SK1381
Unit: mm
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2SK1381 Summary of contents
Page 1
... DGR V ±20 GSS 200 DP P 150 150 ° −55~150 °C stg Symbol Max Unit R 0.833 ° (ch− ° (ch−a) 1 2SK1381 2 −π−MOSIII GATE A 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) 2004-07-06 Unit: mm ...
Page 2
... V ≈ (Ta = 25°C) Symbol Test Condition I — — DRP DSF μ 2SK1381 Min Typ. Max — — ±50 — — 100 100 — 0.8 — 2.0 — 31 — — 3700 — 580 — 1500 — 16 — 46 — 60 — 185 — — ...
Page 3
... 3 2SK1381 2004-07-06 ...
Page 4
... 4 2SK1381 2004-07-06 ...
Page 5
... 5 2SK1381 2004-07-06 ...
Page 6
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK1381 20070701-EN 2004-07-06 ...