2SK2610 Toshiba, 2SK2610 Datasheet

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2SK2610

Manufacturer Part Number
2SK2610
Description
MOSFET N-CH 900V 5A 2-16C1B
Manufacturer
Toshiba
Datasheet

Specifications of 2SK2610

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Company
Part Number
Manufacturer
Quantity
Price
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2SK2610
Manufacturer:
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Quantity:
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Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
= 90 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
: I
: V
= 25°C (initial), L = 43.6 mH, I
(Note 1)
(Note 2)
DSS
th
= 2.0 to 4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK2610
fs
|
=
DS
4.4 S (typ.)
= 2.3 Ω (typ.)
= 10 V, I
DS
−55 to 150
Rating
0.833
Max
= 720 V)
900
900
±30
150
595
150
15
15
50
5
5
AR
1
= 5 A, R
D
= 1 mA)
°C / W
°C / W
Unit
Unit
G
mJ
mJ
°C
°C
W
V
V
V
A
A
= 25 Ω
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
2-16C1B
SC-65
2009-09-29
2SK2610
Unit: mm

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2SK2610 Summary of contents

Page 1

... DSS V 900 DGR V ±30 GSS 150 D E 595 150 ch T −55 to 150 stg Symbol Max Unit R 0.833 ° (ch− ° (ch− 2SK2610 GATE 2. DRAIN (HEAT SINK SOURCE W JEDEC ― mJ JEITA SC-65 A TOSHIBA 2-16C1B mJ Weight: 4.6 g (typ.) °C ° Ω G 2009-09-29 Unit: mm ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SK2610 Min Typ. Max — — ...

Page 3

... 3 2SK2610 2009-09-29 ...

Page 4

... 4 2SK2610 2009-09-29 ...

Page 5

... Ω 43 2SK2610 1 ⎛ B ⎞ VDSS ⋅ L ⋅ ⋅ ⎜ ⎟ B − ⎝ ⎠ VDSS DD 2009-09-29 ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2610 2009-09-29 ...

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