2SK2610

Manufacturer Part Number2SK2610
DescriptionMOSFET N-CH 900V 5A 2-16C1B
ManufacturerToshiba
2SK2610 datasheet
 

Specifications of 2SK2610

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs2.5 Ohm @ 3A, 10VDrain To Source Voltage (vdss)900V
Current - Continuous Drain (id) @ 25° C5AVgs(th) (max) @ Id4V @ 1mA
Gate Charge (qg) @ Vgs45nC @ 10VInput Capacitance (ciss) @ Vds1200pF @ 25V
Power - Max150WMounting TypeThrough Hole
Package / Case2-16C1B (TO-247 N)Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
Enhancement mode
: V
= 2.0 to 4.0 V (V
th
Absolute Maximum Ratings
Characteristics
Drain−source voltage
Drain−gate voltage (R
= 20 kΩ)
GS
Gate−source voltage
DC
(Note 1)
Drain current
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
= 90 V, T
= 25°C (initial), L = 43.6 mH, I
DD
ch
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
2SK2610
: R
= 2.3 Ω (typ.)
DS (ON)
: |Y
|
4.4 S (typ.)
fs
=
= 100 μA (max) (V
= 720 V)
DS
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Symbol
Rating
Unit
V
900
DSS
V
900
DGR
V
±30
GSS
I
5
D
I
15
DP
P
150
D
E
595
AS
I
5
AR
E
15
AR
T
150
ch
T
−55 to 150
stg
Symbol
Max
Unit
R
0.833
°C / W
th (ch−c)
R
50
°C / W
th (ch−a)
= 5 A, R
AR
1
2SK2610
V
V
V
1. GATE
2. DRAIN (HEAT SINK)
A
3. SOURCE
W
JEDEC
mJ
JEITA
SC-65
A
TOSHIBA
2-16C1B
mJ
Weight: 4.6 g (typ.)
°C
°C
= 25 Ω
G
2009-09-29
Unit: mm

2SK2610 Summary of contents

  • Page 1

    ... DSS V 900 DGR V ±30 GSS 150 D E 595 150 ch T −55 to 150 stg Symbol Max Unit R 0.833 ° (ch− ° (ch− 2SK2610 GATE 2. DRAIN (HEAT SINK SOURCE W JEDEC ― mJ JEITA SC-65 A TOSHIBA 2-16C1B mJ Weight: 4.6 g (typ.) °C ° Ω G 2009-09-29 Unit: mm ...

  • Page 2

    ... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2SK2610 Min Typ. Max — — ...

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    ... 3 2SK2610 2009-09-29 ...

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    ... 4 2SK2610 2009-09-29 ...

  • Page 5

    ... Ω 43 2SK2610 1 ⎛ B ⎞ VDSS ⋅ L ⋅ ⋅ ⎜ ⎟ B − ⎝ ⎠ VDSS DD 2009-09-29 ...

  • Page 6

    ... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2610 2009-09-29 ...