HAT2167H Renesas Electronics America, HAT2167H Datasheet - Page 5

• Manufacturer Part Number: HAT2167H
• Description: MOSFET N-CH 30V 40A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2167H

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2700pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

HAT2167H
Main Characteristics
Rev.5.00 Sep 20, 2005 page 3 of 7
500
400
300
200
100
40
30
20
10
50
40
30
20
10
0
0
0
Drain to Source Saturation Voltage vs.
Drain to Source Voltage
Gate to Source Voltage
10 V
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
4.5 V
Gate to Source Voltage
4
2
50
3.0 V
4
8
100
12
6
Tc (°C)
Pulse Test
Pulse Test
150
I
D
V
V
16
= 50 A
8
GS
DS
2.6 V
2.4 V
2.8 V
20 A
10 A
(V)
(V)
200
20
10
0.01
500
100
0.1
Static Drain to Source on State Resistance
10
50
40
30
20
10
10
1
5
2
1
0
0.1
1
Drain to Source Voltage
Gate to Source Voltage
Operation in
this area is
limited by R
Ta = 25°C
1 shot Pulse
V
Pulse Test
V
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
GS
0.3
0.3
Tc = 75°C
= 10 V
= 4.5 V
Drain Current
1
10 V
vs. Drain Current
10
1
DS(on)
2
3
3
25°C
-25°C
3
100
10
I
D
Pulse Test
(A)
V
V
10 µs
4
30
GS
DS
30
(V)
(V)
1000
100
5