NTP27N06G ON Semiconductor, NTP27N06G Datasheet - Page 3

• Manufacturer Part Number: NTP27N06G
• Description: MOSFET N-CH 60V 27A TO220AB
• Manufacturer: ON Semiconductor

Specifications of NTP27N06G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1015pF @ 25V
• Power - Max: 88.2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTP27N06GOS

0.095
0.085
0.075
0.065
0.055
0.045
0.035
0.025
0.015
2.2
1.8
1.4
0.6
56
48
40
32
24
16
8
0
1
−50
0
0
I
V
D
GS
V
= 13.5 A
V
−25
Figure 5. On−Resistance Variation with
GS
8 V
DS
= 10 V
Figure 1. On−Region Characteristics
9 V
= 10 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
1
8
GS
T
Figure 3. On−Resistance versus
J
0
, JUNCTION TEMPERATURE ( C)
= 10 V
I
D
Gate−to−Source Voltage
16
, DRAIN CURRENT (AMPS)
25
2
Temperature
T
J
T
= 100 C
J
T
50
J
= 25 C
24
= −55 C
3
75
32
7.5 V
100
4
40
125
5
150
http://onsemi.com
5.5 V
4.5 V
6.5 V
48
7 V
6 V
5 V
NTP27N06
175
6
56
3
10000
0.065
0.055
0.045
0.035
0.025
0.015
0.095
0.085
0.075
1000
100
56
48
40
32
24
16
10
8
0
1
2.6
0
0
Figure 4. On−Resistance versus Drain Current
V
V
Figure 6. Drain−to−Source Leakage Current
V
DS
GS
T
GS
V
J
V
3.4
DS
w 10 V
= 0 V
= 100 C
GS
= 15 V
8
10
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
, GATE−TO−SOURCE VOLTAGE (VOLTS)
J
= 25 C
I
D
4.2
16
, DRAIN CURRENT (AMPS)
20
and Gate Voltage
versus Voltage
T
T
T
T
T
T
T
J
J
J
J
J
J
J
5
24
= 100 C
= −55 C
= 150 C
= 125 C
= 100 C
= −55 C
= 25 C
30
5.8
32
40
6.6
40
50
7.4
48
8.2
60
56