NTB25P06T4G ON Semiconductor, NTB25P06T4G Datasheet

NTB25P06T4G

Manufacturer Part Number

NTB25P06T4G

Description

MOSFET P-CH 60V 27.5A D2PAK

Manufacturer

ON Semiconductor

Type

Power MOSFETr

Datasheet

1.NTB25P06.pdf (6 pages)

Specifications of NTB25P06T4G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

82 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

27.5A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

50nC @ 10V

Input Capacitance (ciss) @ Vds

1680pF @ 25V

Power - Max

120W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.082 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

13 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 15 V

Continuous Drain Current

25 A

Power Dissipation

120000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Rohs Compliant

YES

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.082Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±15V

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

D2PAK

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTB25P06T4GOS
NTB25P06T4GOS
NTB25P06T4GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB25P06T4G

Manufacturer:

FREESCALE

Quantity:

760

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB25P06T4G

Manufacturer:

Quantity:

800

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB25P06T4G

Manufacturer:

Quantity:

12 500

Company:

H&T Electronics

Part Number:

NTB25P06T4G

Quantity:

620

Current page: 1 of 6
Download datasheet (68Kb)

NTB25P06

Power MOSFET

−60 V, −27.5 A, P−Channel D

withstand high energy in the avalanche and commutation modes.

Features

•

Typical Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1″ pad size

2. When surface mounted to an FR4 board using the minimum recommended

MAXIMUM RATINGS

June, 2006 − Rev. 3

Maximum Lead Temperature for Soldering

Purposes, (1/8″ from case for 10 s)

Drain−to−Source Voltage

Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ T

Operating and Storage

Single Pulse Drain−to−Source Avalanche

Thermal Resistance

Designed for low voltage, high speed switching applications and to

Pb−Free Packages are Available

PWM Motor Controls

Power Supplies

Converters

Bridge Circuits

(Cu Area 1.127 in

pad size (Cu Area 0.412 in

Temperature Range

Energy − Starting T

L(pk)

− Continuous

− Non−Repetitive (t

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

− Continuous @ T

− Single Pulse (t

= 25 V, V

= 20 A, L = 3 mH, R

Rating

= 10 V,

= 25°C

v10 ms)

= 25°C

= 25°C unless otherwise noted)

= 25 W)

= 25°C

Symbol

GSM

DSS

, T

qJC

qJA

PAK

stg

−55 to

Value

+175

"15

"20

27.5

1.25

46.8

63.2

−60

120

600

260

°C/W

Unit

Vpk

Apk

°C

†For information on tape and reel specifications,

NTB25P06

NTB25P06G

NTB25P06T4

NTB25P06T4G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

CASE 418B

(BR)DSS

−60 V

Device

PAK

NTB25P06 = Device Code

ORDERING INFORMATION

http://onsemi.com

65 mW @ −10 V

(Pb−Free)

Package

DS(on)

P−Channel

= Pb−Free Device

= Assembly Location

= Year

= Work Week

PAK

Publication Order Number:

MARKING DIAGRAM

& PIN ASSIGNMENT

TYP

Gate

800/Tape & Reel

25P06G

Drain

50 Units/Rail

AYWW

Shipping

NTB25P06/D

NTB

−27.5 A

Source

MAX

†

Related parts for NTB25P06T4G

NTB25P06T4G Summary of contents

Page 1

... R qJA 63.2 R qJA °C T 260 L Device NTB25P06 NTB25P06G NTB25P06T4 NTB25P06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on) D −27 −10 V P− ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) = −250 mA (Positive Temperature Coefficient) Zero Gate Voltage Drain Current ( − 25°C) GS ...

Page 3

V = − −8 V − −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 − ...

Page 4

2500 C iss 2000 C rss 1500 1000 500 C 0 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation ...

Page 5

... PL 0.13 (0.005) M VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB25P06 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 6

... Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTB25P06 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...

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