NTB25P06T4G ON Semiconductor, NTB25P06T4G Datasheet
NTB25P06T4G
Specifications of NTB25P06T4G
NTB25P06T4GOS
NTB25P06T4GOSTR
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NTB25P06T4G Summary of contents
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... R qJA 63.2 R qJA °C T 260 L Device NTB25P06 NTB25P06G NTB25P06T4 NTB25P06T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on) D −27 −10 V P− ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) = −250 mA (Positive Temperature Coefficient) Zero Gate Voltage Drain Current ( − 25°C) GS ...
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V = − −8 V − −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 − ...
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2500 C iss 2000 C rss 1500 1000 500 C 0 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation ...
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... PL 0.13 (0.005) M VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB25P06 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...
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... Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTB25P06 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi ...