NTB25P06T4G ON Semiconductor, NTB25P06T4G Datasheet - Page 4

• Manufacturer Part Number: NTB25P06T4G
• Description: MOSFET P-CH 60V 27.5A D2PAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTB25P06T4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1680pF @ 25V
• Power - Max: 120W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 25 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: YES
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.082Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB25P06T4GOS; NTB25P06T4GOS; NTB25P06T4GOSTR

1000
100
0.1
3000
2500
2000
1500
1000
1000
10
500
100
1
10
0.1
0
1
10
1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
V
SINGLE PULSE
T
C
Figure 11. Maximum Rated Forward Biased
C
C
GS
Figure 9. Resistive Switching Time Variation
V
iss
rss
= 25°C
−V
DS
= −20 V
DS
t
t
= 0 V
d(off)
5
d(on)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−V
Figure 7. Capacitance Variation
t
t
r
f
GS
R
Thermal Limit
Package Limit
DS(on)
Safe Operating Area
0
R
1
vs. Gate Resistance
G
−V
V
, GATE RESISTANCE (W)
GS
DS
Limit
= 0 V
5
(VOLTS)
dc
10
10 ms
10
C
1 ms
rss
10
100 ms
15
V
I
V
D
DD
GS
T
= −25 A
J
= −30 V
= −10 V
= 25°C
20
http://onsemi.com
C
C
NTB25P06
iss
oss
100
100
25
4
600
500
400
300
200
100
10
25
20
15
10
8
6
4
2
0
5
0
0
25
0
0
Figure 10. Diode Forward Voltage vs. Current
V
V
T
Figure 12. Maximum Avalanche Energy vs.
DS
Drain−to−Source Voltage vs. Total Charge
Q
J
GS
−V
1
= 25°C
0.25
T
4
J
= 0 V
, STARTING JUNCTION TEMPERATURE (°C)
SD
50
Starting Junction Temperature
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Q
10
0.5
g
, TOTAL GATE CHARGE (nC)
Q
75
0.75
2
15
Q
T
20
1
100
1.25
25
V
I
GS
125
D
I
T
D
J
= −25 A
= −25 A
1.5
= 25°C
30
1.75
150
35