NTB25P06T4G ON Semiconductor, NTB25P06T4G Datasheet - Page 2

• Manufacturer Part Number: NTB25P06T4G
• Description: MOSFET P-CH 60V 27.5A D2PAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTB25P06T4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 27.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1680pF @ 25V
• Power - Max: 120W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 25 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Rohs Compliant: YES
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.082Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB25P06T4GOS; NTB25P06T4GOS; NTB25P06T4GOSTR

3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 3 & 4)
BODY−DRAIN DIODE RATINGS (Note 3)
Drain−to−Source Breakdown Voltage (Note 3)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage
Static Drain−Source On−State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Diode Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(Positive Temperature Coefficient)
(V
(V
(V
(Negative Threshold Temperature Coefficient)
(V
(V
(V
GS
GS
GS
DS
GS
GS
DS
= −10 V, I
= 0 V, I
= 0 V, V
= 0 V, V
= V
= −10 V, I
= −10 V, I
GS,
D
I
D
DS
DS
= −250 mA)
D
= −250 mA)
D
D
= −60 V, T
= −60 V, , T
= −12.5 A)
= −25 A)
= −12.5 A)
Characteristic
J
J
= 25°C)
GS
= 150°C)
= ± 15 V, V
(I
S
= −25 A, V
(V
V
(V
(V
(T
(I
(I
GS
DD
DS
DS
S
S
C
dI
= −25 A, V
= −25 A, V
= −10 V R
= 25°C unless otherwise noted)
= −30 V, I
= −48 V, I
DS
= −25 V, V
S
V
F = 1.0 MHz)
/dt = 100 A/ms)
GS
= 0 V)
GS
= −10 V)
= 0 V, T
D
G
D
GS
GS
GS
http://onsemi.com
= −25 A,
= 9.1 W)
= −25 A,
= 0 V)
= 0 V,
= 0 V,
J
NTB25P06
= 150°C)
2
V
Symbol
R
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
gFS
C
V
GS(th)
C
d(on)
d(off)
DSS
GSS
Q
Q
Q
t
t
t
oss
t
t
SD
rss
RR
iss
rr
a
b
r
f
T
1
2
−2.0
Min
−60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.065
0.070
1200
−2.8
−1.8
−1.4
Typ
345
190
6.2
6.5
0.2
64
13
90
14
72
43
33
15
70
50
20
−
−
−
−
0.075
0.082
−100
±100
1680
Max
−4.0
−2.5
−10
480
180
118
320
24
68
50
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
Unit
nA
nC
mC
mA
pF
ns
ns
ns
ns
ns
W
V
V
V