NTMS4107NR2G ON Semiconductor, NTMS4107NR2G Datasheet

NTMS4107NR2G

Manufacturer Part Number

NTMS4107NR2G

Description

MOSFET N-CH 30V 11A 8-SOIC

Manufacturer

ON Semiconductor

Datasheet

1.NTMS4107NR2G.pdf (6 pages)

Specifications of NTMS4107NR2G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.5 mOhm @ 15A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

11A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

45nC @ 4.5V

Input Capacitance (ciss) @ Vds

6000pF @ 15V

Power - Max

930mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTMS4107NR2G
NTMS4107NR2GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMS4107NR2G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 3
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SUBJECT: ON Semiconductor Update Notification #16265

TITLE: Copper Wire in the SO8 Packages for MOSFET Products

PROPOSED FIRST SHIP DATE: 15 Aug 2009

AFFECTED CHANGE CATEGORY(S): SO8 Assembly

AFFECTED PRODUCT DIVISION(S): PowerFET Business Unit

ADDITIONAL RELIABILITY DATA: Available

Contact your local ON Semiconductor Sales Office

SAMPLES: N/A

FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:

Contact your local ON Semiconductor Sales Office or Jennie Shen < Jennie.Shen@onsemi.com>

NOTIFICATION TYPE:

ON Semiconductor will consider this change approved unless specific conditions of acceptance are

provided in writing within 30 days of receipt of this notice. To do so, contact your local ON

Semiconductor Sales Office.

DESCRIPTION AND PURPOSE:

An addendum of additional part numbers to the Final Product/Process Change Notification

#16142:

IPCN 16091 Copper Wire replacing Gold Wire in the SO8, TSOP6, ChipFET Packages for

MOSFET Products issued 31 Jan 2008.

ON Semiconductor is notifying customers of its use of Copper Wire (in place of Gold Wire) on

their MOSFET Products in the SO8 Package. Products assembled with our Trench1

MOSFET Die, and co-packaged SO8 products assembled with a Schottky Die will be

affected. (Note: The co-packaged SO8 product with a Schottky Die is our FETKY product

type.)

Reliability Qualification and full electrical characterization over temperature have been

performed showing no difference between the product builds.

Issue Date: 12 May 2009

UPDATE CHANGE NOTIFICATION

Generic Copy

Rev.07-02-06

12 May 2009

Page 1 of 3

Related parts for NTMS4107NR2G

NTMS4107NR2G Summary of contents

Page 1

... IPCN 16091 Copper Wire replacing Gold Wire in the SO8, TSOP6, ChipFET Packages for MOSFET Products issued 31 Jan 2008. ON Semiconductor is notifying customers of its use of Copper Wire (in place of Gold Wire) on their MOSFET Products in the SO8 Package. Products assembled with our Trench1 MOSFET Die, and co-packaged SO8 products assembled with a Schottky Die will be affected ...

Page 2

Update Notification #16265 Reliability Data Summary: SO8 Device: NTMS4177PR2G Test: High Temperature Reverse Bias (HTRB) Conditions: Ta=150'C, Vds= 80% BVdss Rating, Duration : 1008-Hrs, 3-Lots Results: 0/240 Test: High Temperature Gate Bias (HTGB) Conditions: Ta=150'C, Vds= 100% Vgs Rating, Duration ...

Page 3

... Update Notification #16265 AFFECTED DEVICE LIST NTMS4107NR2G NTMS4176PR2G NTMS4177PR2G NTMS4873NFR2G NTMSD2P102LR2G NTMSD2P102R2SG NTMSD2P102R2 NTMSD3P102R2G NTMSD3P102R2SG NTMSD3P102R2 NTMD4184PFR2G NTMD4884NFR2G Issue Date: 12 May 2009 Rev.07-02-06 Page ...

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