VN2410LZL1G ON Semiconductor, VN2410LZL1G Datasheet

VN2410LZL1G

Manufacturer Part Number

VN2410LZL1G

Description

MOSFET N-CH 240V 200MA TO-92

Manufacturer

ON Semiconductor

Datasheet

1.VN2410LG.pdf (4 pages)

Specifications of VN2410LZL1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

10 Ohm @ 500mA, 10V

Drain To Source Voltage (vdss)

240V

Current - Continuous Drain (id) @ 25° C

200mA

Vgs(th) (max) @ Id

2V @ 1mA

Input Capacitance (ciss) @ Vds

125pF @ 25V

Power - Max

350mW

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Other names

VN2410LZL1G
VN2410LZL1GOSTR

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

TMOS FET Transistor

N–Channel — Enhancement

TMOS is a registered trademark of Motorola, Inc.

REV 1

1. Pulse Test; Pulse Width < 300 s, Duty Cycle

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

STATIC CHARACTERISTICS

Drain – Source Voltage

Drain – Gate Voltage

Gate – Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation @ T C = 25 C

Operating and Storage Temperature

Thermal Resistance, Junction to Ambient

Maximum Lead Temperature for Soldering

Drain – Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate– Body Leakage

Gate Threshold Voltage

On–State Drain Current (1)

Drain–Source On Resistance (1)

Forward Transconductance (1)

Motorola, Inc. 1997

– Continuous

– Non–repetitive (t p

Derate above 25 C

Purposes, 1/16 from case for 10

seconds

(V GS = 0, I D = 100 A)

(V DS = 120 Vdc, V GS = 0)

(V DS = 120 Vdc, V GS = 0, T A = 125 C)

(V DS = 0, V GS = 15 V)

(V DS = V GS , I D = 1.0 mA)

(V GS = 10 V, V DS

(V GS = 2.5 V, I D = 0.1 A)

(V GS = 10 V, I D = 0.5 A)

(V DS = 10 V, I D = 0.5 A)

Characteristic

Rating

2.0 V DS(on) )

50 s)

Characteristic

(T A = 25 C unless otherwise noted)

Symbol

T J , T stg

Symbol

V DGR

V GSM

V DSS

R JA

V GS

I DM

P D

T L

I D

2.0%.

Value

312.5

Max

240

200

500

350

300

2.8

—

GATE

mW/ C

mAdc

Unit

Vdc

Vpk

C/W

3 DRAIN

1 SOURCE

V (BR)DSS

V GS(th)

Symbol

r DS(on)

I D(on)

I DSS

I GSS

g fs

Min

240

300

0.8

1.0

—

VN2410L

CASE 29–04, STYLE 22

TO–92 (TO–226AA)

Order this document

Max

500

2.0

100

—

by VN2410L/D

nAdc

Unit

Vdc

Adc

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VN2410LZL1G Summary of contents

Page 1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement MAXIMUM RATINGS Rating Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage – Continuous – Non–repetitive ( Continuous Drain Current Pulsed Drain Current Power ...

Page 2

VN2410L ELECTRICAL CHARACTERISTICS ( unless otherwise noted) (Continued) Characteristic DYNAMIC CHARACTERISTICS Input Capacitance ( Vdc Output Capacitance f = 1.0 MHz 1.0 MHz) Reverse Transfer ...

Page 3

SEATING K PLANE Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI 2. CONTROLLING DIMENSION: INCH. 3. ...

Page 4

VN2410L Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out ...

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