VN2410LZL1G ON Semiconductor, VN2410LZL1G Datasheet - Page 3

• Manufacturer Part Number: VN2410LZL1G
• Description: MOSFET N-CH 240V 200MA TO-92
• Manufacturer: ON Semiconductor

Specifications of VN2410LZL1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 240V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 125pF @ 25V
• Power - Max: 350mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: VN2410LZL1G; VN2410LZL1GOSTR

Motorola Small–Signal Transistors, FETs and Diodes Device Data
SEATING
PLANE
R
X X
1
A
V
H
N
F
G
N
P
L
C
K
B
SECTION X–X
PACKAGE DIMENSIONS
D
CASE 029–04
(TO–226AA)
ISSUE AD
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
4. DIMENSION F APPLIES BETWEEN P AND L.
Y14.5M, 1982.
IS UNCONTROLLED.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
STYLE 22:
DIM
G
A
B
C
D
F
H
J
K
L
N
P
R
V
PIN 1. SOURCE
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.115
0.135
2. GATE
3. DRAIN
MIN
–––
INCHES
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
0.105
0.100
MAX
–––
–––
–––
–––
12.70
MILLIMETERS
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
6.35
2.04
2.93
3.43
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
2.66
2.54
–––
–––
–––
–––
VN2410L
3