HSMP-3824-TR1G Avago Technologies US Inc., HSMP-3824-TR1G Datasheet - Page 3

• Manufacturer Part Number: HSMP-3824-TR1G
• Description: DIODE PIN SWITCH 50V SOT-23
• Manufacturer: Avago Technologies US Inc.
• Type: Switchr

Specifications of HSMP-3824-TR1G

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Common Cathode
• Voltage - Peak Reverse (max): 50V
• Current - Max: 1A
• Capacitance @ Vr, F: 0.8pF @ 20V, 1MHz
• Resistance @ If, F: 600 mOhm @ 10mA, 100MHz
• Configuration: Dual Common Cathode
• Reverse Voltage: 50 V
• Forward Continuous Current: 1 A
• Frequency Range: UHF
• Termination Style: SMD/SMT
• Carrier Life: 0.07 us
• Maximum Diode Capacitance: 0.8 pF @ 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 0.6 Ohm @ 10 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Recovery Time: 7 nS
• Operating Temperature Classification: Military
• Package Type: SOT-23
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Applications Frequency Range: UHF
• Diode Case Style: SOT-23
• Breakdown Voltage: 50V
• Capacitance Ct: 0.8pF
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Reel Quantity: 3000
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / Rohs Status: Compliant

Typical Parameters at T
Typical Applications for Multiple Diode Products
RF 1
Figure 7. Simple SPDT Switch, Using Only Positive Current.
3
Figure 1. Forward Current vs. Forward Voltage.
Figure 4. Capacitance vs. Reverse Voltage.
0.01
100
BIAS 1
1.4
1.2
1.0
0.8
0.6
0.1
10
1
0
0
V
V
0.2
F
R
10
– FORWARD VOLTAGE (mA)
– REVERSE VOLTAGE (V)
125C
0.4
20
25C
RF COMMON
0.6
–50C
30
0.8
C
= 25°C (unless otherwise noted), Single Diode
40
1.0
1.2
50
BIAS 2
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current.
Figure 2. Reverse Recovery Time vs. Forward Current
for Various Reverse Voltages.
100
120
115
110
105
100
10
95
90
85
RF 2
1
10
1
Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
I
F
– FORWARD BIAS CURRENT (mA)
FORWARD CURRENT (mA)
RF 1
BIAS
20
Figure 8. High Isolation SPDT Switch, Dual Bias.
10
V
V
V
R
R
R
= 10V
= 2V
= 5V
30
30
RF COMMON
Figure 6. Large Signal Transfer Curve of the
HSMP-482x Limiter.
Figure 3. RF Resistance at 25C vs. Forward Bias Current.
100
0.1
30
25
20
15
10
10
0.01
5
0
1
0
I
F
– FORWARD BIAS CURRENT (mA)
5
Measured with external
bias return
0.1
10
CW POWER IN (dBm)
15
20
1
25
1.5 GHz
30 35
10
1.0 GHz
RF 2
BIAS
100
40