NE3509M04-T2-A CEL, NE3509M04-T2-A Datasheet - Page 3

• Manufacturer Part Number: NE3509M04-T2-A
• Description: AMP HJ-FET 2GHZ SOT-343
• Manufacturer: CEL

Specifications of NE3509M04-T2-A

• Transistor Type: HFET
• Frequency: 2GHz
• Gain: 17.5dB
• Voltage - Rated: 4V
• Current Rating: 60mA
• Noise Figure: 0.4dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Power - Output: 11dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 80 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 150 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
250
200
150
100
Remark The graphs indicate nominal characteristics.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
50
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
0
0
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
NF
50
Ambient Temperature T
min
10
G
Drain Current I
a
Frequency f (GHz)
5
NF
Mounted on Glass Epoxy PCB
(1.08 cm
100
min
G
20
a
2
× 1.0 mm (t) )
150
D
(mA)
10
A
30
(˚C)
V
I
200
f = 2.0 GHz
V
A
D
DS
DS
= 10 mA
= +25°C, unless otherwise specified)
= 2 V
= 2 V
Data Sheet PG10608EJ01V0DS
250
15
40
20
18
16
14
12
10
8
6
4
2
0
20
18
16
14
12
10
8
6
4
2
0
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
45
40
35
30
25
20
15
10
80
60
40
20
–1.0
5
0
0
1.0
f = 2.0 GHz, I
V
DS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
= 2 V
–0.8
Drain to Source Voltage V
Drain to Source Voltage V
Gate to Source Voltage V
1.5
1
D
= 10 mA
–0.6
2.0
2
NF
G
min
a
–0.4
2.5
3
GS
DS
DS
–0.2
(V)
3.0
V
(V)
(V)
4
NE3509M04
GS
–0.1 V
–0.4 V
–0.2 V
–0.3 V
–0.5 V
= 0 V
3.5
0
5
20
18
16
14
12
10
8
6
4
2
0
3